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STM8S103F2 Datasheet(PDF) 87 Page - STMicroelectronics |
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STM8S103F2 Datasheet(HTML) 87 Page - STMicroelectronics |
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87 / 121 page ![]() DocID15441 Rev 14 87/121 STM8S103F2 STM8S103F3 STM8S103K3 Electrical characteristics 88 Electromagnetic interference (EMI) Based on a simple application running on the product (toggling 2 LEDs through the I/O ports), the product is monitored in terms of emission. This emission test is in line with the norm IEC 61967-2 which specifies the board and the loading of each pin. Absolute maximum ratings (electrical sensitivity) Based on two different tests (ESD, DLU and LU) using specific measurement methods, the product is stressed to determine its performance in terms of electrical sensitivity. For more details, refer to the application note AN1181. Electrostatic discharge (ESD) Electrostatic discharges (a positive then a negative pulse separated by 1 second) are applied to the pins of each sample according to each pin combination. The sample size depends on the number of supply pins in the device (3 parts x (n+1) supply pin). One model can be simulated: Human body model. This test conforms to the JESD22-A114A/A115A standard. For more details, refer to the application note AN1181. Static latch-up Two complementary static tests are required on 10 parts to assess the latch-up performance. • A supply overvoltage (applied to each power supply pin), and • A current injection (applied to each input, output and configurable I/O pin) are performed on each sample. Table 49. EMI data Symbol Parameter Conditions Unit General conditions Monitored frequency band Max fCPU(1) 1. Guaranteed by characterization results. 16 MHz/ 8 MHz 16 MHz/ 16 MHz SEMI Peak level VDD = 5 V, TA = 25 °C, LQFP32 package. Conforming to IEC 61967-2 0.1 MHz to 30 MHz 5 5 dBµV 30 MHz to 130 MHz 4 5 130 MHz to 1 GHz 5 5 EMI level EMI level 2.5 2.5 - Table 50. ESD absolute maximum ratings Symbol Ratings Conditions Class Maximum value(1) 1. Guaranteed by characterization results Unit VESD(HBM) Electrostatic discharge voltage (Human body model) TA = 25°C, conforming to JESD22-A114 A 4000 V VESD(CDM) Electrostatic discharge voltage (Charge device model) TA= 25°C, conforming to SD22-C101 LQFP32 package IV 1000 |
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