MIC5801 datasheet(3/22 Pages) MICROCHIP

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DS20006184B-page 3

MIC5800/1

1.0

ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings †

Output Voltage (VCE) ................................................................................................................................................+50V

Supply Voltage (VDD) ................................................................................................................................................+15V

Input Voltage Range (VIN).................................................................................................................–0.3V to VDD + 0.3V

Continuous Collector Current (IC) .........................................................................................................................500 mA

ESD Rating (Note 1) .................................................................................................................................. ESD Sensitive

Operating Ratings ††

Package Power Dissipation (PD)

MIC5800 SOIC..........................................................................................................................................................1.0W

Derate above TA = +25°C ................................................................................................................................8.5 mW/°C

MIC5801 PLCC.......................................................................................................................................................2.25W

Derate above TA = +25°C ..............................................................................................................................18.2 mW/°C

MIC5801 Wide SOIC ................................................................................................................................................1.4W

Derate above TA = +25°C .................................................................................................................................11 mW/°C

† Notice: Exceeding the absolute maximum ratings may damage the device.

†† Notice: The device is not guaranteed to function outside its operating ratings.

Note 1: Microchip CMOS devices have input-static protection, but are susceptible to damage when exposed to

extremely high static electrical charges.

ELECTRICAL CHARACTERISTICS

Electrical Characteristics: VDD = 5V, TA = +25°C, VA ≤ +85°C unless otherwise noted. Note 1

Parameter

Sym.

Min.

Typ.

Max.

Units

Conditions

Output Leakage Current

ICEX

—

µA

VCE = 50V, TA = +25°C

—

100

VCE = 50V, TA = +70°C

Collector-Emitter

Saturation Voltage

VCE(SAT)

—

0.9

1.1

IC = 100 mA

—

1.1

1.3

IC = 200 mA

—

1.3

1.6

IC = 350 mA, VDD = 7.0V

Input Voltage (Low)

VIN(0)

—

1.0

—

Input Voltage (High)

VIN(1)

10.5

—

VDD = 12V

8.5

—

VDD = 10V

3.5

—

VDD = 5V, Note 2

Input Resistance

RIN

200

—

kΩ

VDD = 12V

300

—

VDD = 10V

600

—

VDD = 5V

Supply Current ON (Each

Stage)

IDD(ON)

—

1.0

2.0

VDD = 12V, Outputs Open

—

0.9

1.7

VDD = 10V, Outputs Open

—

0.7

1.0

VDD = 5V, Outputs Open

Supply Current OFF

(Total)

IDD(OFF)

—

200

µA

VDD = 12V, Outputs Open, Inputs = 0V

—

100

VDD = 5V, Outputs Open, Inputs = 0V

Note 1: Specification for packaged product only.

2: Operation of these devices with standard TTL or DTL may require the use of appropriate pull-up resistors

to ensure a minimum logic “1”.

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