BLF571 datasheet(3/14 Pages) AMPLEON

3 / 14 page

BLF571#3

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 3 — 1 September 2015

3 of 14

BLF571

HF / VHF power LDMOS transistor

6. Characteristics

Table 6.

DC characteristics

Tj = 25 C unless otherwise specified.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

V(BR)DSS drain-source breakdown

voltage

VGS = 0 V; ID = 0.25 mA

110

VGS(th)

gate-source threshold voltage

VDS = 10 V; ID = 25 mA

1.25

1.7

2.25

VGSq

gate-source quiescent voltage VDS = 50 V; ID = 50 mA

1.25

1.75

2.25

IDSS

drain leakage current

VGS = 0 V; VDS = 50 V

1.4

A

IDSX

drain cut-off current

VGS = VGS(th) + 3.75 V;

VDS = 10 V

3.0

3.6

IGSS

gate leakage current

VGS = 11 V; VDS = 0 V

140

gfs

forward transconductance

VDS = 10 V; ID = 1.25 A

1.8

RDS(on)

drain-source on-state

resistance

VGS = VGS(th) + 3.75 V;

ID = 833 mA

1.34



Crs

feedback capacitance

VGS = 0 V; VDS = 50 V;

f = 1 MHz

0.18

Ciss

input capacitance

VGS = 0 V; VDS = 50 V;

f = 1 MHz

22.9

Coss

output capacitance

VGS = 0 V; VDS = 50 V;

f = 1 MHz

9.64

Table 7.

RF characteristics

Mode of operation: CW; f = 225 MHz; RF performance at VDS = 50 V; IDq = 50 mA; Tcase = 25 C;

unless otherwise specified; in a class-AB production test circuit.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

power gain

PL = 20 W

25.5

27.5

29.5

RLin

input return loss

PL = 20 W

D

drain efficiency

PL = 20 W

BLF571 Datasheet(PDF) 3 Page - Ampleon Netherlands B.V.

BLF571 Datasheet(HTML) 3 Page - Ampleon Netherlands B.V.

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14

Datasheet Download

Link URL