BLF882 datasheet(3/12 Pages) AMPLEON

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BLF882_BLF882S#3

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Product data sheet

Rev. 3 — 1 September 2015

3 of 12

BLF882; BLF882S

UHF power LDMOS transistor

6. Characteristics

[1]

ID is the drain current

7. Test information

7.1 Ruggedness in class-AB operation

The BLF882 and BLF882S are capable of withstanding a load mismatch corresponding to

VSWR

 20 : 1 through all phases under the following conditions: VDS =50V;

f = 705 MHz at rated PL(1dB).

Table 6.

DC characteristics

Tj = 25 C; unless otherwise specified.

Symbol Parameter

Conditions

Min Typ

Max Unit

V(BR)DSS drain-source breakdown voltage VGS =0V; ID =1.2 mA

[1] 104 -

VGS(th)

gate-source threshold voltage

VDS = 10 V; ID =120 mA [1] 1.4 1.9

2.4

IDSS

drain leakage current

VGS =0V; VDS =50V

1.4

A

IDSX

drain cut-off current

VGS =VGS(th) + 3.75 V;

VDS =10V

[1] -19

IGSS

gate leakage current

VGS =10V; VDS = 0 V

140 nA

RDS(on)

drain-source on-state resistance VGS =VGS(th) + 3.75 V;

ID =4.25A

[1] -

240



Table 7.

AC characteristics

Tj = 25 C; unless otherwise specified.

Symbol Parameter

Conditions

Min Typ

Max Unit

Ciss

input capacitance

VGS = 0 V; VDS = 50 V; f = 1 MHz

105

Coss

output capacitance

VGS = 0 V; VDS =50 V; f = 1MHz

Crs

feedback capacitance

VGS = 0 V; VDS =50 V; f = 1MHz

0.7

Table 8.

RF characteristics

Test signal: CW pulsed; RF characteristics in Ampleon production narrowband test circuit;

Tj =25 C; unless otherwise specified.

Symbol Parameter

Conditions

Min Typ Max Unit

VDS

drain-source voltage

IDq

quiescent drain current

100 -

PL(AV)

average output power

f = 705 MHz; tp =100 s;  = 10 %

196 200 -

power gain

19.6 20.6 -

D

drain efficiency

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