1. Product profile

1.1 General description

A 200 W LDMOS RF power transistor for broadcast transmitter applications and industrial

applications. The transistor can deliver 200 W in broadband applications from HF to

860 MHz. The excellent ruggedness and broadband performance of this device makes it

ideal for digital transmitter applications.

[1]

PAR of output signal at 0.01% probability on CCDF; PAR of input signal = 9.5 dB at 0.01% probability on

CCDF.

1.2 Features and benefits



Integrated ESD protection



Excellent ruggedness



High power gain



High efficiency



Excellent reliability



Easy power control



Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances

(RoHS)

1.3 Applications



Transmitter applications in the HF to 860 MHz frequency range



Industrial applications in the HF to 860 MHz frequency range



Broadcast transmitters

BLF882; BLF882S

UHF power LDMOS transistor

Rev. 3 — 1 September 2015

Product data sheet

Table 1.

Test information

Test signal

f

PAR

(MHz)

(V)

(W)

(dB)

(%)

(dB)

RF performance in a class-AB 705 MHz narrowband test circuit

CW, class-AB

705

50

180

21

62

-

CW pulsed, class-AB

705

50

200

21

63

-

RF performance in a class-AB 470 MHz to 705 MHz broadband test circuit

DVB-T (8k OFDM)

470 to 705

50

33

20

28 to 31

8.0 to 8.4 [1]