BLF882 datasheet(5/12 Pages) AMPLEON

5 / 12 page

BLF882_BLF882S#3

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 3 — 1 September 2015

5 of 12

BLF882; BLF882S

UHF power LDMOS transistor

7.3 Graphical data

7.3.1 DVB-T

7.3.2 CW pulsed

VDS = 50 V; IDq = 100 mA; f = 705 MHz.

VDS = 50 V; IDq = 100 mA; f = 705 MHz; PAR of input

signal = 9.5 dB at 0.01 % probability on CCDF.

Fig 2.

Power gain and drain efficiency as function of

output power; typical values

Fig 3.

Peak-to-average ratio and adjacent channel

power ratio as function of output power;

typical values

aaa-018283

100

PL (W)

(dB)

ηD

(%)

ηD

aaa-018282

100

120

-37

-33

-29

-25

-21

-17

PL (W)

PAR

(dB)

ACPR

(dBc)

ACPR

PAR

VDS = 50 V; f = 705 MHz; tp = 100 s;  =10 %.

(1) IDq = 100 mA

(2) IDq = 200 mA

(3) IDq = 300 mA

VDS = 50 V; f = 705 MHz; tp = 100 s;  =10%.

(1) IDq = 100 mA

(2) IDq = 200 mA

(3) IDq = 300 mA

Fig 4.

Power gain as a function of output power;

typical values

Fig 5.

Drain efficiency as a function of output power;

typical values

aaa-018284

100

150

200

250

PL (W)

(dB)

(1)

(2)

(3)

aaa-018285

100

150

200

250

PL (W)

ηD

(%)

(1)

(2)

(3)

BLF882 Datasheet(PDF) 5 Page - Ampleon Netherlands B.V.

BLF882 Datasheet(HTML) 5 Page - Ampleon Netherlands B.V.

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

Datasheet Download

Link URL