SL2S6002_SDS

All information provided in this document is subject to legal disclaimers.

© NXP Semiconductors N.V. 2016. All rights reserved.

Product short data sheet

COMPANY PUBLIC

Rev. 3.0 — 16 June 2016

374730

9 of 14

NXP Semiconductors

SL2S6002

ICODE DNA

7.

Limiting values

[1]

Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only

and functional operation of the device at these or any conditions other than those described in the operating conditions and electrical

characteristics sections of this specification is not implied.

[2]

This product includes circuitry specifically designed for the protection of its internal devices from the damaging effects of excessive static

charge. Nonetheless, it is suggested that conventional precautions be taken to avoid applying greater than the rated maxima.

[3]

[4]

For ESD measurement, the IC was mounted in a CDIP8 package.

8.

Characteristics

8.1 Wafer memory characteristics

8.2 Interface characteristics

[1]

Bandwidth limitation (

 7 kHz) according to ISM band regulations.

[2]

Including losses in the resonant capacitor and rectifier.

[3]

Measured with an HP4285A LCR meter at 13.56 MHz and 1.5 V RMS.

[4]

The maximum persistent time strongly depends on the ambient temperature.

Table 6.

Limiting values (Wafer)[1][2]

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

storage temperature

55

+125

C

total power dissipation

-

125

mW

junction temperature

40

+85

C

maximum input current

LA to LB; peak

[3] -

60

mA

input current

LA to LB; RMS

-

30

mA

electrostatic discharge voltage

Human body model

[4] -

2kV

Table 7.

Wafer EEPROM characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

retention time

-

-

year

write endurance

100000

-

-

cycle

Table 8.

Interface characteristics

Typical ratings are not guaranteed. The values listed are at room temperature.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

input frequency

[1] 13.553

13.56

13.567

MHz

minimum RMS input voltage

operating

read/write

1.1

-

1.3

V

minimum input power

operating

[2] -40

-

W

input capacitance

between LA

and LB

[3] 22.3

23.5

24.7

pF

persistent time

[4] 2-

-

s