GL05T to GL24T

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Vishay Semiconductors

Not for New Designs

Rev. 2.5, 20-May-2021

2

Document Number: 85809

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

The GLxxT contains an avalanche diode (pin 3-1) and a switching diode (pin 3-2). With pin 1 connected to the signal or data line

and pin 2 connected to ground both diodes are in series (pin 3 remains unconnected). The big and robust avalanche diode,

avalanche diode is in the range of typ. 260 pF (GL05T) and 65 pF (GL24T). The small switching diode in series has a low

capacitance of just 2.5 pF (typ.). As both diodes are in series (with pin 3 not connected) the total capacitance of both diodes

measured between pin 1 and 2 is as low as the capacitance of the switching diode.

Before the GLxxT can provide this low capacitance the big capacitance of the avalanche diode has to be charged up with the

first signal or data pulses. This is usually no problem for digital signals like USB or other data ports.

With the GLxxT a signal or data line can be protected against positive transients only. For negative transients another GLxxT

can be used to provide a back path for the negative transients as well.

ABSOLUTE MAXIMUM RATINGS GL05T

PARAMETER

TEST CONDITIONS

SYMBOL

VALUE

UNIT

Peak pulse current

8/20 μs

Pin 1-2 (pin 3 n.c.)

25

A

Peak pulse power

8/20 μs waveform

300

W

ESD immunity

Contact discharge acc. IEC 61000-4-2; 10 pulses

± 8

kV

Air discharge acc. IEC 61000-4-2; 10 pulses

± 15

kV

Blocking voltage

Pin 2-1 or pin 2-3

70

V

Operating temperature

Junction temperature

-55 to +150

°C

Storage temperature

-55 to +150

°C

ABSOLUTE MAXIMUM RATINGS GL12T

PARAMETER

TEST CONDITIONS

SYMBOL

VALUE

UNIT

Peak pulse current

8/20 μs

Pin 1-2 (pin 3 n.c.)

12

A

Peak pulse power

8/20 μs waveform

300

W

ESD immunity

Contact discharge acc. IEC 61000-4-2; 10 pulses

± 8

kV

Air discharge acc. IEC 61000-4-2; 10 pulses

± 15

kV

Blocking voltage

Pin 2-1 or pin 2-3

70

V

Operating temperature

Junction temperature

-55 to +150

°C

Storage temperature

-55 to +150

°C

ABSOLUTE MAXIMUM RATINGS GL15T

PARAMETER

TEST CONDITIONS

SYMBOL

VALUE

UNIT

Peak pulse current

8/20 μs

Pin 1-2 (pin 3 n.c.)

10

A

Peak pulse power

8/20 μs waveform

300

W

ESD immunity

Contact discharge acc. IEC 61000-4-2; 10 pulses

± 8

kV

Air discharge acc. IEC 61000-4-2; 10 pulses

± 15

kV

Blocking voltage

Pin 2-1 or pin 2-3

70

V

Operating temperature

Junction temperature

-55 to +150

°C

Storage temperature

-55 to +150

°C

ABSOLUTE MAXIMUM RATINGS GL24T

PARAMETER

TEST CONDITIONS

SYMBOL

VALUE

UNIT

Peak pulse current

8/20 μs

Pin 1-2 (pin 3 n.c.)

5A

Peak pulse power

8/20 μs waveform

300

W

ESD immunity

Contact discharge acc. IEC 61000-4-2; 10 pulses

± 8

kV

Air discharge acc. IEC 61000-4-2; 10 pulses

± 15

kV

Blocking voltage

Pin 2-1 or pin 2-3

70

V

Operating temperature

Junction temperature

-55 to +150

°C

Storage temperature

-55 to +150

°C