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DS42MB200 Datasheet(PDF) 7 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
Part # DS42MB200
Description  Dual 4.25 Gb/s 1:2 Mux/Buffer with Input Equalization and Output Pre-Emphasis
PDF  14 Pages
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

DS42MB200 Datasheet(HTML) 7 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage (V
CC)
−0.3V to 4V
CMOS/TTL Input Voltage
−0.3V to
(V
CC +0.3V)
CML Input/Output Voltage
−0.3V to
(V
CC +0.3V)
Junction Temperature
+125˚C
Storage Temperature
−65˚C to +150˚C
Lead Temperature
Soldering, 4 sec
+260˚C
Thermal Resistance,
θ
JA
33.7˚C/W
Thermal Resistance,
θ
JC-top
20.7˚C/W
Thermal Resistance,
θ
JC-bottom
5.8˚C/W
Thermal Resistance,
Φ
JB
18.2˚C/W
ESD Rating HBM, 1.5 k
Ω, 100 pF
6 kV
ESD Rating Machine Model
250V
Recommended Operating Ratings
Min Typ
Max
Units
Supply Voltage (V
CC-GND)
3.135 3.3
3.465
V
Supply Noise Amplitude
10 Hz to 2 GHz
20
mV
PP
Ambient Temperature
0
85
˚C
Case Temperature
100
˚C
Electrical Characteristics
Over recommended operating supply and temperature ranges unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
(Note 2)
Max
Units
LVCMOS DC SPECIFICATIONS
V
IH
High Level Input
Voltage
2.0
V
CC
+0.3
V
V
IL
Low Level Input
Voltage
−0.3
0.8
V
I
IH
High Level Input
Current
V
IN =VCC
−10
10
µA
I
IL
Low Level Input
Current
V
IN = GND
75
94
124
µA
R
PU
Pull-High Resistance
35
k
RECEIVER SPECIFICATIONS
V
ID
Differential Input
Voltage Range
AC Coupled Differential Signal
Below 1.25 Gb/s
At 1.25 Gbps–3.125 Gbps
Above 3.125 Gbps
This parameter is not production tested.
100
100
100
1750
1560
1200
mV
P-P
mV
P-P
mV
P-P
V
ICM
Common Mode
Voltage at Receiver
Inputs
Measured at receiver inputs reference to
ground.
1.3
V
R
ITD
Input Differential
Termination
On-chip differential termination between IN+
or IN−.
84
100
116
R
ITSE
Input Termination
(single-end)
On-chip termination IN+ or IN− to GND for
frequency > 100 MHz.
50
DRIVER SPECIFICATIONS
VODB
Output Differential
Voltage Swing
without
Pre-Emphasis
R
L = 100
±1%
PRES_1=PRES_0=0
PREL_1=PREL_0=0
Driver pre-emphasis disabled.
Running K28.7 pattern at 4.25 Gbps.
See Figure 5 for test circuit.
1000
1200
1400
mV
P-P
www.national.com
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