LM555JSLASH883 datasheet(2/21 Pages) TI

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LM555QML

SNOSAP2C – AUGUST 2005 – REVISED APRIL 2013

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SCHEMATIC DIAGRAM

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

ABSOLUTE MAXIMUM RATINGS

(1)

Supply Voltage

+18V

Power Dissipation (2)

Metal Can

760 mW

CDIP

1180 mW

Operating Temperature Range

−55°C ≤ TA ≤ +125°C

Maximum Junction Temperature (TJmax)

+150°C

Storage Temperature Range

−65°C ≤ TA ≤ +150°C

Soldering Information (Soldering 10 Seconds)

260°C

Thermal Resistance

θJA

CDIP Still Air

125°C/W

CDIP 500LF / Min Air Flow

71°C/W

Metal Can Still Air

176°C/W

Metal Can 500LF / Min Air Flow

96°C/W

θJC

CDIP

20°C/W

Metal Can

42°C/W

ESD Tolerance (3)

500V

(1)

Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for

which the device is functional, but do not ensure specific performance limits. For ensured specifications and test conditions, see the

Electrical Characteristics. The ensured specifications apply only for the test conditions listed. Some performance characteristics may

degrade when the device is not operated under the listed test conditions.

(2)

The maximum power dissipation must be derated at elevated temperatures and is dictated by TJmax (maximum junction temperature),

θJA (package junction to ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any

temperature is PDmax = (TJmax - TA)/θJA or the number given in the Absolute Maximum Ratings, whichever is lower.

(3)

Human body model, 1.5K

Ω in series with 100pF.

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