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F1490 Datasheet(PDF) 8 Page - Renesas Technology Corp

Part # F1490
Description  High Gain RF Amplifier 1.8GHz to 6.4GHz
PDF  48 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

F1490 Datasheet(HTML) 8 Page - Renesas Technology Corp

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F1490 Datasheet
© 2021 Renesas Electronics Corporation
8
November 15, 2021
Absolute Maximum Ratings
Stresses above those listed below may cause permanent damage to the device. Functional operation of the device at these or any other
conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions
for extended periods may affect device reliability.
Table 2.
Absolute Maximum Ratings
Parameter
Symbol
Minimum
Maximum
Unit
VDD to GND
VDD
-0.3
+6.0
V
STBY
VCTL
-0.3
Lower of
(5.0, VDD +
0.25)
V
BIAS_1 (into pin)
IBIAS_1
1.5
mA
BIAS_2 (out of pin)
IBIAS_2
3
mA
RFIN externally applied DC voltage
VRFIN
-0.5
+0.5
V
RFOUT externally applied DC voltage
VRFOUT
-0.5
+8
V
Maximum CW Input Power applied for 24 hours. VDD = 5V, TEPAD = 115˚C, input /
output VSWR < 2:1 based on a 50Ω system. Standby = logic HIGH: ON state. [a]
PMAX_IN_ON
22
dBm
Maximum CW Input Power applied for 24 hour. VDD = 5V, TEPAD = 115˚C, input /
output VSWR < 2:1 based on a 50Ω system. Standby = logic LOW: OFF state.[a]
PMAX_IN_OFF
22
Junction Temperature
TJMAX
150
°C
Storage Temperature Range
Tst
-65
150
°C
Lead Temperature (soldering, 10s)
260
°C
ElectroStatic Discharge – HBM
(JEDEC/ESDA JS-001-2012)
VESDHBM
1000
V
ElectroStatic Discharge – CDM
(JEDEC 22-C101F)
VESDCDM
500
V
[a] Exposure to these maximum RF levels can result in significantly higher IDD current draw due to overdriving the amplifier stages.



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