Specifications and information are subject to change without notice.

2003-11

Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan

Phone: +81-45-853-7263 Fax: +81-45-853-1291

-5-

Technical Note

P0120002P

250mW GaAs Power FET (Pb-Free Type)

SUMITOMO ELECTRIC

Tc=25°C, Vds=6V, Ids=100mA, Pin=-5dBm

[Pout-Lstate]

f = 2.1GHz

Γ

pout

: 0.73

∠ 85.8

Source

: 0.79

∠ 160.5

Pout max : 15.75dBm

[IP3-Lstate]

f1 = 2.1GHz

f2 = 2.101GHz

Γ

IP3

: 0.27

∠ 87.0

Source : 0.71

∠ 131.9

IP3 max : 45.75d Bm

Tc= 25°C, Vds=6V, Ids=80mA , Pin=-5d Bm

[Pout-Lstate]

f = 2.1GHz

Γ

pout

: 0.74

∠ 89.0

Source

: 0.79

∠ 160.5

Pout max : 16.05dBm

[IP3-Lstate]

f1 = 2.1GHz

f2 = 2.101GHz

Γ

IP3

: 0.35

∠ 90.9

Source : 0.71

∠ 131.9

IP3 max : 40.95d Bm

+j100

+j50

+j25

-j25

-j50

-j100

45.75

44.7543.75

40.75

41.75

42.75

38.45

39.45

38.95

40.95

39.95

40.45

+j25

+j50

+j100

-j100

-j50

-j25

25Ω

50Ω

100Ω

38.45

39.45

38.95

40.95

39.95

40.45

+j25

+j50

+j100

-j100

-j50

-j25

25Ω

50Ω

100Ω

14.5

15.0

14.75

15.75

15.25

15.5

+j25

+j50

+j100

-j100

-j50

-j25

25Ω

50Ω

100Ω

14.8

15.3

15.05

16.05

15.55

15.8

+j25

+j50

+j100

-j100

-j50

-j25

25Ω

50Ω

100Ω

14.8

15.3

15.05

16.05

15.55

15.8

+j25

+j50

+j100

-j100

-j50

-j25

25Ω

50Ω

100Ω