Technical Note

P0120002P

250mW GaAs Power FET (Pb-Free Type)

SUMITOMO ELECTRIC

Specifications and information are subject to change without notice.

2003-11

Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan

Phone: +81-45-853-7263 Fax: +81-45-853-1291

♦Features

· Up to 2.7 GHz frequency band

· Beyond +22 dBm output power

· Up to +41dBm Output IP3

· High Drain Efficiency

· 15dB Gain at 2.1GHz

· SOT-89 SMT Package (Pb-free)

· Low Noise Figure

♦Applications

· Wireless communication system

· Cellular, PCS, PHS, W-CDMA, WLAN

♦Description

P0120002P is a high performance GaAs MESFET housed in

a low-cost SOT-89 package. Our originally developed

"pulse-doped" channel structure has realized low distortion,

which leads to high IP3. The channel structure also achieved

an extremely low noise figure. The details about pulse-doped

FET channel are described in our products catalog.

Utilization of AuSn die attach has realized a low and stable

thermal resistance. The lead frame is plated with Sn-Bi to

make the device Pb-free.

SEI’s long history of manufacturing has cultivated high

device reliability. The estimated MTTF of the FET is longer

than 15years at Tj of 150°C. You can see the details in

Reliability and Quality Assurance.

♦Functional Diagram

4

12

3

Pin No.

Function

1

Input/Gate

2, 4

Ground

3

Output/Drain

♦Ordering Information

Part No

Description

Number

of devices

Container

P0120002P

GaAs Power FET

1000

7” Reel

KP022J

2.11-2.17GHz

Application Circuit

1

Anti-static

Bag

♦Absolute Maximum Ratings (@Tc=25°C)

Parameter

Symbol

Value

Units

Drain-Source Voltage

Vds

8

V

Gate-Source Voltage

Vgs

- 4

V

Drain Current

Ids

Idss

---

RF Input Power

(continuous)

Pin

dBm

Power Dissipation

Pt

1.7

W

Junction Temperature

Tj

125

°C

Storage Temperature

Tstg

- 40 to +125

°C

Tc: Case Temperature. Operating the device beyond any of these

values may cause permanent damage.

(*) Measured at 2.1GHz with our test fixture matched to IP3.

♦Electrical Specifications (@Tc=25°C)

Values

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Units

Saturated Drain Current

Idss

Vds=3V, Vg=0V

---

---

300

mA

Transconductance

gm

Vds=6V, Ids=100mA

90

---

---

mS

Pinchoff Voltage

Vp

Vds=6V, Ids=10mA

- 3.0

---

- 1.7

V

Gate-Source Breakdown Voltage

|Vgs0|

Igso= - 10

µA

3.0

---

---

V

DC

Thermal Resistance

Rth

Channel-Case

---

---

60

°C/W

Frequency

f

2.7

GHz

Output Power

@ 1dB Gain Compression

P1dB

---

24

---

dBm

Small Signal Gain

G

---

15

---

dB

Output IP3

IP3

---

41

---

dBm

RF

PowerAdded Efficiency

Vds=6V

Ids=80mA

f=2.1GHz

---

50

---

%

-1-