B4E

1

2

3

5

4

Pin connection

Pin

Connection

1

Drain A

2

Drain B

3

Source (bottom side)

4

Gate B

5

Gate A

Features

Order code

f (MHz)

VDD

POUT

Gain

Efficiency

RF2L16180CB4

1450

28 V

180 W

14 dB

60%

•

High efficiency and linear gain operations

•

Integrated ESD protection

•

Internally matched for ease of use

•

Optimized for Doherty applications

•

Large positive and negative gate-source voltage range for improved class C

operation

•

In compliance with the European Directive 2002/95/EC

Applications

•

Multicarrier base station

•

Industrial, scientific and medical

Description

The RF2L16180CB4 is 180 W, 28 V internally matched LDMOS transistor designed

for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with

frequencies from 1300 to 1600 MHz. Four leads can be configured as single ended,

180 degree push-pull or 90 degree hybrid or Doherty with proper external matching

network.

Product status link

RF2L16180CB4

Product summary

Order code

RF2L16180CB4

Marking

2L16180

Package

B4E

Packing

Tape and reel 13”

Base/bulk

Quantity

120/120

180 W, 28 V, 1.3 to 1.6 GHz RF power LDMOS transistor

RF2L16180CB4

Datasheet

DS13287 - Rev 2 - April 2021

For further information contact your local STMicroelectronics sales office.

www.st.com