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STL8N65M2 Datasheet(PDF) 6 Page - STMicroelectronics |
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STL8N65M2 Datasheet(HTML) 6 Page - STMicroelectronics |
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6 / 15 page ![]() Figure 7. Gate charge vs gate-source voltage VGS 6 4 2 0 0 4 Qg(nC) (V) 8 6 8 10 VDD=520V ID=5A 300 200 100 0 400 500 VDS 2 10 VDS (V) 12 600 GIPG060820141216FSR Figure 8. Capacitance variations C 100 10 1 0.1 0.1 10 VDS(V) (pF) 1 100 Ciss Coss Crss 1000 GIPG060820141238FSR Figure 9. Normalized gate threshold voltage vs temperature VGS(th) 0.9 0.8 0.7 0.6 -75 0 TJ(°C) (norm) 25 1.0 75 25 125 ID=250μA 1.1 GADG270520190910MT Figure 10. Normalized on-resistance vs temperature RDS(on) 1.8 1.0 0.2 -75 0 TJ(°C) (norm) -25 75 25 125 0.6 1.4 2.2 ID=2.5A VGS=10V GADG270520190911MT Figure 11. Source-drain diode forward characteristics GIPD220520191023SDF 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0 1 2 3 4 VSD (V) ISD (A) Tj = -50 °C Tj = 25 °C Tj = 150 °C Figure 12. Output capacitance stored energy GIPD080520191142EOS 2.4 1.8 1.2 0.6 0.0 0 100 200 300 400 500 600 EOSS (µJ) VDS (V) STL8N65M2 Electrical characteristics curves DS13016 - Rev 1 page 6/15 |
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