STL8N65M2 datasheet(4/15 Pages) STMICROELECTRONICS

Part #	STL8N65M2

Description	N-channel 650 V, 1 typ., 4 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package

PDF	15 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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4 / 15 page

Table 7. Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

ISDM (1)

Source-drain current (pulsed)

VSD (2)

Forward on voltage

ISD = 4 A, VGS = 0 V

1.6

trr

Reverse recovery time

ISD = 5 A, di/dt = 100 A/µs,

VDD = 60 V (see

Figure 15. Test circuit for

inductive load switching and

diode recovery times)

275

Qrr

Reverse recovery charge

1.62

µC

IRRM

Reverse recovery current

11.8

trr

Reverse recovery time

ISD = 5 A, di/dt = 100 A/µs,

VDD = 60 V, Tj = 150 °C

(see Figure 15. Test circuit for

inductive load switching and

diode recovery times)

430

Qrr

Reverse recovery charge

2.54

µC

IRRM

Reverse recovery current

11.9

1. Pulse width is limited by safe operating area

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

STL8N65M2

Electrical characteristics

DS13016 - Rev 1

page 4/15

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