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STL22N60DM6 Datasheet(PDF) 6 Page - STMicroelectronics

Part # STL22N60DM6
Description  N-channel 600 V, 220 m typ., 13 A, MDmesh DM6 Power MOSFET in a PowerFLAT 8x8 HV package
PDF  14 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STL22N60DM6 Datasheet(HTML) 6 Page - STMicroelectronics

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Figure 7. Typical drain-source on-resistance
GADG280120221106RID
230
225
220
215
210
0
2
4
6
8
10
12
RDS(on)
(mΩ)
ID (A)
VGS = 10 V
Figure 8. Normalized on-resistance vs temperature
GADG191220180856RON
2.5
2.0
1.5
1.0
0.5
0.0
-75
-25
25
75
125
RDS(on)
(norm.)
Tj (°C)
VGS = 10 V
Figure 9. Normalized gate threshold vs temperature
GADG191220180856VTH
1.1
1.0
0.9
0.8
0.7
0.6
-75
-25
25
75
125
VGS(th)
(norm.)
Tj (°C)
ID = 250 µA
Figure 10. Normalized breakdown voltage vs temperature
GADG191220180856BDV
1.10
1.05
1.00
0.95
0.90
0.85
-75
-25
25
75
125
V(BR)DSS
(norm.)
Tj (°C)
ID = 1 mA
Figure 11. Typical output capacitance stored energy
GADG110220191544EOS
7
6
5
4
3
2
1
0
0
100 200 300 400 500 600
(μJ)
VDS (V)
Eoss
Figure 12. Typical reverse diode forward characteristics
GADG280120221107SDF
1.0
0.8
0.6
0.4
0
2
4
6
8
10
12
VSD
(V)
ISD (A)
TJ = -50°C
TJ = 25°C
TJ = 150°C
STL22N60DM6
Electrical characteristics (curves)
DS13914 - Rev 1
page 6/14



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