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TCED4100 Datasheet(PDF) 3 Page - Vishay Siliconix

Part # TCED4100
Description  Optocoupler, Photodarlington Output, Dual Channel, High Gain
PDF  8 Pages
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

TCED4100 Datasheet(HTML) 3 Page - Vishay Siliconix

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For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83728
806
Rev. 1.6, 16-May-08
TCED2100/TCED4100
Vishay Semiconductors
Optocoupler, Photodarlington Output,
Dual Channel, High Gain
Note
According to DIN EN 60747-5-5 (see figure 1). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance
with the safety ratings shall be ensured by means of suitable protective circuits.
Fig. 1 - Derating Diagram
Fig. 2 - Test Pulse Diagram for Sample Test According to
DIN EN 60747-5-5/DIN EN 60747-; IEC60747
MAXIMUM SAFETY RATINGS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward current
IF
130
mA
OUTPUT
Power dissipation
Pdiss
265
mW
COUPLER
Rated impulse voltage
VIOTM
8kV
Safety temperature
Tsi
150
°C
INSULATION RATED PARAMETERS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Partial discharge test voltage -
routine test
100 %, ttest = 1 s
Vpd
1.6
kV
Partial discharge test voltage -
lot test (sample test)
tTr = 60 s, ttest = 10 s,
(see figure 2)
VIOTM
8kV
Vpd
1.3
kV
Insulation resistance
VIO = 500 V
RIO
1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
1011
Ω
VIO = 500 V, Tamb = 150 °C
(construction test only)
RIO
109
Ω
0
25
50
75
125
0
50
100
150
200
300
Tamb - Ambient Temperature (°C)
150
14887
100
250
Photodarlington
Psi (mW)
IR-Diode
Isi (mA)
t
13930
t1, t2 = 1 to 10 s
t3, t4 = 1 s
ttest = 10 s
tstres = 12 s
VIOTM
VPd
VIOWM
VIORM
0
t1
ttest
tTr = 60 s
tstres
t3
t4
t2
SWITCHING CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Rise time
VCC = 2 V, IC = 10 mA, RL = 100 Ω, (see figure 3)
tr
300
µs
Fall time
VCC = 2 V, IC = 10 mA, RL = 100 Ω, (see figure 3)
tf
250
µs



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