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STB100N10F7 Datasheet(PDF) 7 Page - STMicroelectronics |
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STB100N10F7 Datasheet(HTML) 7 Page - STMicroelectronics |
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7 / 28 page ![]() Figure 13. Normalized gate threshold voltage vs temperature VGS(th) 1 0.96 0.94 0.92 -55 -5 TJ(°C) (norm) -30 70 20 45 95 120 0.98 1.02 1.04 ID= 250 µA AM15746v1 Figure 14. Normalized on-resistance vs temperature RDS(on) 1.8 1.4 0.8 0.4 -55 -5 TJ(°C) (norm) -30 70 20 45 95 0.6 1 1.2 1.6 2 120 ID = 40 A VGS = 10 V AM15760v2 Figure 15. Source-drain diode forward characteristics VSD 0 40 ISD(A) (V) 20 100 60 80 0.5 0.6 0.7 0.8 TJ=-55°C TJ=150°C TJ=25°C 0.9 1 1.1 AM15749v1 STB100N10F7,STD100N10F7,STF100N10F7,STI100N10F7,STP100N10F7 Electrical characteristics (curves) DS9291 - Rev 5 page 7/28 |
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