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STB100N10F7 Datasheet(PDF) 4 Page - STMicroelectronics |
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STB100N10F7 Datasheet(HTML) 4 Page - STMicroelectronics |
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4 / 28 page ![]() Table 7. Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 80 A ISDM(1) Source-drain current (pulsed) - 320 A VSD(2) Forward on voltage ISD = 80 A, VGS = 0 V - 1.2 V trr Reverse recovery time ISD = 80 A, di/dt = 100 A/µs VDD = 80 V, TJ = 150 °C (see Figure 18. Test circuit for inductive load switching and diode recovery times) - 77 ns Qrr Reverse recovery charge - 146 nC IRRM Reverse recovery current - 4 A 1. Pulse width is limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% STB100N10F7,STD100N10F7,STF100N10F7,STI100N10F7,STP100N10F7 Electrical characteristics DS9291 - Rev 5 page 4/28 |
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