STP160N4LF6 datasheet(1/14 Pages) STMICROELECTRONICS

Part #	STP160N4LF6

Description	N-channel 40 V, 0.0021 mΩ typ., 120 A, STripFET™ VI DeepGATE™ Power MOSFET in a TO-220 package

PDF	14 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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This is information on a product in full production.

April 2014

DocID026266 Rev 1

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STP160N4LF6

N-channel 40 V, 0.0021 m

Ω typ., 120 A, STripFET™ VI

DeepGATE™ Power MOSFET in a TO-220 package

Datasheet - production data

Figure 1. Internal schematic diagram

Features

• R

DS(on)

* Q

g

industry benchmark

• Extremely low on-resistance R

DS(on)

• Logic level drive

• High avalanche ruggedness

• 100% avalanche tested

Applications

• Switching applications

Description

This device is an N-channel Power MOSFET

developed using the 6

th

generation of STripFET™

DeepGATE™ technology, with a new gate

structure. The resulting Power MOSFET exhibits

the lowest R

DS(on)

in all packages.

1

2

3

TAB

TO-220

Order code

VDS RDS(on) max

ID

PTOT

STP160N4LF6

40 V

0.0029

Ω

120 A

150 W

Table 1. Device summary

Order code

Marking

Package

Packaging

STP160N4LF6

160N4LF6

TO-220

Tube

www.st.com

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STP160N4LF6 Datasheet(PDF) 1 Page - STMicroelectronics

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