STP160N4LF6 datasheet(4/14 Pages) STMICROELECTRONICS

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Electrical characteristics

STP160N4LF6

4/14

DocID026266 Rev 1

Electrical characteristics

CASE

= 25 °C unless otherwise specified).

Table 4. Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(BR)DSS

Drain-source breakdown

voltage (V

= 0)

= 250 μA40

DSS

Zero gate voltage drain

current (V

= 0)

= 20 V

= 20 V, Tc = 125 °C

μA

GSS

Gate body leakage current

= 0)

= ± 20 V

100

GS(th)

Gate threshold voltage

= V

, I

= 250 μA1

DS(on)

Static drain-source on-

resistance

= 10 V, I

= 60 A

0.0022

0.0029

Ω

= 5 V, I

= 60 A

0.0024

0.0031

Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min

Typ.

Max.

Unit

iss

Input capacitance

= 20 V, f=1 MHz,

= 0 V

8130

oss

Output capacitance

770

rss

Reverse transfer

capacitance

-670

Total gate charge

= 20 V, I

= 60 A

= 10 V

(see Figure 14)

-181

Gate-source charge

Gate-drain charge

Table 6. Switching on/off (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

d(on)

Turn-on delay time

= 20 V, I

= 60 A,

= 4.7

Ω, V

= 10 V

(see Figure 15)

-20

Rise time

131

d(off)

Turn-off delay time

205

Fall time

116

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