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STP160N4LF6 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STP160N4LF6
Description  N-channel 40 V, 0.0021 mΩ typ., 120 A, STripFET™ VI DeepGATE™ Power MOSFET in a TO-220 package
PDF  14 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP160N4LF6 Datasheet(HTML) 3 Page - STMicroelectronics

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DocID026266 Rev 1
3/14
STP160N4LF6
Electrical ratings
14
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
V
DS
Drain-source voltage
40
V
V
GS
Gate-source voltage
± 20
V
I
D
Drain current (continuous) at T
C
= 25 °C
120
A
I
D
Drain current (continuous) at T
C
= 100 °C
100
A
I
DM
(1)
1.
Pulse width is limited by safe operating area
Drain current (pulsed)
480
A
P
TOT
Total dissipation at T
C
= 25 °C
150
W
Derating factor
1
W/°C
I
AS
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
jmax
)
60
A
E
AS
Single pulse avalanche energy
323
mJ
T
stg
Storage temperature
-55 to 175
°C
T
j
Operating junction temperature
Table 3. Thermal resistance
Symbol
Parameter
Value
Unit
R
thj-case
Thermal resistance junction-case max
1.0
°C/W
R
thj-a
Thermal resistance junction-ambient max
62.5
°C/W



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