IL755, ILD755

www.vishay.com

Vishay Semiconductors

Rev. 1.7, 10-Mar-2021

2

Document Number: 83641

For technical questions, contact: optocoupleranswers@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note

• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not

implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute

maximum ratings for extended periods of the time can adversely affect reliability

Note

• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering

evaluation. Typical values are for information only and are not part of the testing requirements

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

PART

SYMBOL

VALUE

UNIT

INPUT

Forward continuous current

IF

60

mA

Power dissipation

Pdiss

100

mW

Derate linearly from 25°C

1.33

mW/°C

OUTPUT

Collector emitter breakdown

voltage

BVCEO

60

V

Collector base breakdown

voltage

BVCBO

60

V

Power dissipation

IL755-1

Pdiss

200

mW

IL755-2

200

mW

ILD755-1

150

mW

ILD755-2

150

mW

Derate linearly from 25°C

IL755-1

2.6

mW/°C

IL755-2

2.6

mW/°C

ILD755-1

2.0

mW/°C

ILD755-2

2.0

mW/°C

COUPLER

Total power dissipation

IL755-1

Ptot

250

mW

IL755-2

250

mW

ILD755-1

400

mW

ILD755-2

400

mW

Derate linearly from 25 °C

IL755-1

3.0

mW/°C

IL755-2

3.0

mW/°C

ILD755-1

3.0

mW/°C

ILD755-2

3.0

mW/°C

Storage temperature

Tstg

-55 to +150

°C

Operating temperature

Tamb

-55 to +100

°C

Lead soldering time at 260 °C

10

s

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

INPUT

Forward voltage

IF = ± 10 mA

VF

1.2

1.5

V

OUTPUT

Collector emitter breakdown voltage

IC = 1.0 mA

BVCEO

60

75

V

Collector base breakdown voltage

IC = 10 μA

BVCBO

60

90

V

Collector emitter leakage current

VCE = 10 V, IF = 0 A

ICEO

10

100

nA

COUPLER

Collector emitter saturation voltage

IC = 10 mA, IF = ± 10 mA

VCEsat

1V