TMF3202Z datasheet(2/8 Pages) TACHYONICS

2 / 8 page

□ DC Characteristics

( T

j = 25 ℃, unless otherwise specified )

Page 2 of 8

http://www.tachyonics.co.kr

October. 2005.

Rev. 1.0

Cross-modulation

Noise figure

Power gain

Reverse transfer capacitance

Output capacitance

Input capacitance at gate2

Input capacitance at gate1

Forward transfer admittance

PARAMETER

MAX.

TYP.

㏈㎶

105

100

k=1%, fw=50MHz;

funw=60MHz AGC = 40dB

㏈㎶

k=1%, fw=50MHz;

funw=60MHz AGC = 10dB

㏈㎶

k=1%, fw=50MHz;

funw=60MHz AGC = 0dB

mod

㏈

2.0

1.5

f=800MHz; Zi = S11 opt(NF)

㏈

1.2

f=400MHz; Zi = S11 opt(NF)

㏈

f=800MHz; Zi = S11

*, Zo = S22*

㏈

f=400MHz; Zi = S11

*, Zo = S22*

㏈

f=200MHz; Zi = S11

, Zo = S22

Gtr

f=1MHz

rss

㎊

0.9

f=1MHz

oss

㎊

3.3

f=1MHz

ig2-ss

㎊

2.2

1.7

f=1MHz

ig1-ss

Tj=25℃

FSI

UNIT

MIN.

CONDITIONS

SYMBOL

□ AC Characteristics

( Common source; T

a = 25 ℃, VG2-S = 4V, VDS =5V, ID =12mA ;unless otherwise specified )

Preliminary Specification

TMF3202Z

Gate2 cut-off current

Gate1 cut-off current

Drain-source current

Gate2-source threshold voltage

Gate1-source threshold voltage

Forward source-gate2 voltage

Forward source-gate1 voltage

Gate2-source breakdown voltage

Gate1-source breakdown voltage

Drain-source breakdown voltage

PARAMETER

1.2

1.0

1.5

MAX.

㎁

G2-S=5V; VG1-S=VDS=0

G2-S

㎁

G1-S=5V; VG2-S=VDS=0

G1-S

㎃

G2-S=4V; VDS=5V; RG=62㏀

DSX

0.3

DS=5V; VG1-S=4V; ID=100㎂

G2-S(th)

0.3

DS=5V; VG2-S=4V; ID=100㎂

G1-S(th)

0.5

G1-S=VDS=0; IS-G2=10㎃

(F)S-G2

0.5

G2-S=VDS=0; IS-G1=10㎃

(F)S-G1

G1-S=VDS=0; IG2-S=10㎃

(BR)G2-SS

G2-S=VDS=0; IG1-S=10㎃

(BR)G1-SS

G1-S=VG2-S=0; ID=10㎂

(BR)DSS

UNIT

MIN.

CONDITION

SYMBOL

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