F10NK50Z datasheet(3/16 Pages) STMICROELECTRONICS

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Electrical characteristics

TC = 25 °C unless otherwise specified

Table 3. Static characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VCES(clamped)

Collector-emitter clamped voltage

IC = 2 mA, VGE = 0 V,

TJ= - 40 °C to 175 °C

360

390

420

V(BR)ECS

Emitter-collector break-down

voltage

VGE = 0 V, IC = 75 mA

VGE(clamped)

Gate-emitter clamped voltage

IG = ±2 mA

VCE(sat)

Collector-emitter saturation

voltage

VGE = 4.5 V, IC = 10 A

1.35

1.7

VGE = 4.5 V, IC = 10 A,

TJ = 150 °C

1.30

VGE = 3.8 V, IC = 6 A

1.30

VGE(th)

Gate-threshold voltage

VGE = VCE, IC = 1 mA,

TJ = -40 °C

1.4

VGE = VCE, IC = 1 mA

1.2

1.6

2.3

VGE = VCE, IC = 1 mA,

TJ = 150 °C (1)

0.7

ICES

Collector cut-off current

VCE = 15 V, VGE = 0 V,

TJ = 150 °C (1)

µA

VCE = 200 V, VGE = 0 V,

TJ = 150 °C (1)

100

µA

IGES

Gate-emitter leakage current

VGE = ±10 V, VCE = 0 V

450

625

830

µA

RGE

Gate emitter resistance

kΩ

Gate resistance

1.6

kΩ

1. Defined by design, not subject to production test.

Table 4. Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Input capacitance

VCE = 25 V, f = 1 MHz,

VGE = 0 V

490

Coes

Output capacitance

Cres

Reverse transfer capacitance

Total gate charge

VCE = 280 V, IC = 10 A,

VGE = 0 to 5 V

STGB18N40LZT4

Electrical characteristics

DS5664 - Rev 7

page 3/16

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