©

1984

DATA SHEET

SILICON TRANSISTOR

2SC4183

RF AMPLIFIER FOR UHF TV TUNER

NPN SILICON EPITAXIAL TRANSISTOR

SUPER MINI MOLD

DESCRIPTION

The 2SC4183 is specifically designed for UHF RF amplifier applica-

tions. The 2SC4183 features high gain, low noise, and excellent forward

AGC characteristics in tiny plastic super mini mold package makes it

suitable for use in small type equipments such as Hybrid Integrated

Circuit and other applications.

FEATURES

•

Low NF and high Gpb

NF = 3.0 dB Typ.

Gpb = 10 dB Typ. (f = 900 MHz)

•

Foward AGC characteristics.

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Collector to Base Voltage

VCB0

30

V

Collector to Emitter Voltage

VCE0

25

V

Emitter to Base Voltage

VEB0

3.0

V

Collector Current

IC

20

mA

Total Power Dissipation

PT

160

mW

Junction Temperature

Tj

150

˚C

Storage Temperature

Tstg

–65 to +150

˚C

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

Characteristics

Symbol

MIN.

TYP.

MAX.

Unit

Test Conditions

Collector Cutoff Current

ICB0

0.1

µAVCB = 10 V, IE = 0

DC Current Gain

hFE

60

100

240

VCE = 5 V, IC = 2 mA

Gain Bandwidth Product

fT

700

1 000

MHz

VCE = 5 V, IC = 2 mA

Output Capacitance

Cob

0.55

1.0

pF

VCB = 5 V, IE = 0

Noise Figure

NF

3.0

4.8

dB

VCE = 5 V, IC = 2 mA, f = 900 MHz

Power Gain

Gpb

610

dB

VCE = 5 V, IC = 2 mA, f = 900 MHz

Collector Saturation Voltage

VCE(sat)

0.5

V

IC = 10 mA, IB = 1 mA

hFE Classification

Rank

U16

U17

U18

Marking

U16

U17

U18

hFE

60 to 120

90 to 180

120 to 240

Document No. P11188EJ4V0DS00 (4th edition)

(Previous No. TC-1432A)

Date Published February 1996 P

Printed in Japan

PACKAGE DIMENSIONS

in millimeters

2.1 ± 0.1

1.25 ± 0.1

2

1

3

Marking

PIN CONNECTIONS

1. Emitter

2. Base

3. Collector