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LP38856 Datasheet(PDF) 3 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
Part # LP38856
Description  3A Fast-Response High-Accuracy LDO Linear Regulator with Enable
PDF  14 Pages
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

LP38856 Datasheet(HTML) 3 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Storage Temperature Range
−65˚C to +150˚C
Lead Temperature
Soldering, 5 seconds
260˚C
ESD Rating
Human Body Model (Note 2)
±2kV
Power Dissipation (Note 3)
Internally Limited
V
IN Supply Voltage (Survival)
−0.3V to +6.0V
V
BIAS Supply Voltage (Survival)
−0.3V to +6.0V
V
EN Voltage (Survival)
−0.3V to +6.0V
V
OUT Voltage (Survival)
−0.3V to +6.0V
I
OUT Current (Survival)
Internally Limited
Junction Temperature
−40˚C to +150˚C
Operating Ratings(Note 1)
V
IN Supply Voltage
(V
OUT +VDO)toVBIAS
V
BIAS Supply Voltage
3.0V to 5.5V
V
EN Enable Input Voltage
0.0V to V
BIAS
I
OUT
0 mA to 3.0A
Junction Temperature
Range(Note 3)
−40˚C to +125˚C
Electrical Characteristics Unless otherwise specified: V
IN =VOUT(NOM) + 1V, VBIAS = 3.0V, IOUT =10mA,
C
IN =COUT = 10 µF, CBIAS = 1µF, VEN =VBIAS. Limits in standard type are for TJ = 25˚C only; limits in boldface type apply
over the junction temperature (T
J) range of -40˚C to +125˚C. Minimum and Maximum limits are guaranteed through test, de-
sign, or statistical correlation. Typical values represent the most likely parametric norm at T
J = 25˚C, and are provided for ref-
erence purposes only.
Symbol
Parameter
Conditions
MIN
TYP
MAX
Units
V
OUT
Output Voltage Tolerance
V
OUT(NOM) +1V
≤ V
IN
≤ V
BIAS,
3.0V
≤ V
BIAS
≤ 5.5V,
10 mA
≤ I
OUT
≤ 3.0A
-1.0
-3.0
0.0
+1.0
+3.0
%
V
OUT(NOM) +1V
≤ V
IN
≤ V
BIAS,
3.0V
≤ V
BIAS
≤ 5.5V,
10 mA
≤ I
OUT
≤ 3.0A,
0˚C
≤ T
J
≤ 125˚C
-2.0
0
+2.0
∆V
OUT/
∆V
IN
Line Regulation, V
IN
(Note 4)
V
OUT(NOM) +1V
≤ V
IN
≤ V
BIAS
-
0.04
-
%/V
∆V
OUT/
∆V
BIAS
Line Regulation, V
BIAS
(Note 4)
3.0V
≤ V
BIAS
≤ 5.5V
-
0.10
-
%/V
∆V
OUT/
∆I
OUT
Output Voltage Load Regulation
(Note 5)
10 mA
≤ I
OUT
≤ 3.0A
-
0.2
-
%/A
V
DO
Dropout Voltage
V
IN −VOUT
(Note 6)
I
OUT = 3.0A
-
240
300
450
mV
I
GND(IN)
Ground Pin Current Drawn from
V
IN Supply
LP38856-0.8
10 mA
≤ I
OUT
≤ 3.0A
-
7.0
8.5
9.0
mA
LP38856-1.2
10 mA
≤ I
OUT
≤ 3.0A
-11
12
15
V
EN
≤ 0.5V
-
1.0
10
300
µA
I
GND(BIAS)
Ground Pin Current Drawn from
V
BIAS Supply
10 mA
≤ I
OUT
≤ 3.0A
-
3.0
3.8
4.5
mA
V
EN
≤ 0.5V
-
100
170
200
µA
UVLO
Under-Voltage Lock-Out
Threshold
V
BIAS rising until device is
functional
2.20
2.00
2.45
2.70
2.90
V
UVLO
(HYS)
Under-Voltage Lock-Out
Hysteresis
V
BIAS falling from UVLO
threshold until device is
non-functional
60
50
150
300
350
mV
I
SC
Output Short-Circuit Current
V
IN =VOUT(NOM) + 1V,
V
BIAS = 3.0V, VOUT = 0.0V
-
6.2
-
A
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