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L6572 Datasheet(PDF) 8 Page - STMicroelectronics |
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L6572 Datasheet(HTML) 8 Page - STMicroelectronics |
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8 / 22 page ![]() Electrical characteristics L6572 8/22 Doc ID 023882 Rev 1 4 Electrical characteristics (VS = 14.4 V, VBOOT - Vout = 14.4 V, TAMB = 25 °C, unless otherwise specified) Table 5. Electrical characteristics Symbol Parameter Test condition Min. Typ. Max. Unit VSUVP VS turn-ON threshold 10.1 11 11.9 V VSUVN VS turn-OFF threshold 7.3 8 8.7 V VSUVH VS hysteresis 2.7 3 3.3 V ISU Startup current VS < VSUVP 160 250 µA Iq Quiescent current VS > VSUVP 12 mA IBOOTLK BOOT pin leakage current VBOOT = 580 V 5 µA IOUTLK OUT pin leakage current VOUT = 562 V 5 µA IHVG SO High-side driver source current VHVG - VOUT = 5 V 20 40 mA IHVG SI High-side driver sink current VHVG - VOUT = 5 V 40 50 mA ILVG SO Low-side driver source current VLVG = 5 V 20 40 mA ILVG SI Low-side driver sink current VLVG = 5 V 40 50 mA tDT Programmable deadtime RDT = 27 kΩ 1.95 2.50 3.05 µs tDT Minimum deadtime RDT = 14 kΩ, (1) 1µs tDT Maximum deadtime RDT = 40 kΩ, (1) 5µs fCL Frequency clock generator RCL = 47 kΩ 72 90 108 kHz fCL Minimum frequency RCL = 220 kΩ, (1) 12 kHz fCL Maximum frequency RCL = 22 kΩ, (1) 250 kHz tT1/2on Time with T1/2 switched on during preheating phase RPH = 20 kΩ, RDT = 27 k Ω testing signal: test A 3.60 4.17 4.70 µs tT1/2on Time with T1/2 switched on during normal operation RNO = 27 k Ω, RDT = 27 k Ω testing signal: test B 6.40 7.50 8.40 µs tT1/2on Time with T1/2 switched on during dimmed operation RDO = 27 k Ω, RDT = 27 k Ω testing signal: test B 6.40 7.50 8.40 µs XPB XPB = tT1/2on(powerb) / tT1/2on(nom) RNO = 27 k Ω, RDT = 27 k Ω NO: test. signal: test B PB: test. signal: test C 1.24 1.34 1.42 tdisc Time to activate UVLO when VSENSE = VZVS VLVG = VS 10 20 30 µs VZVS ZVS threshold referred to SENSE pin (1) 330 385 440 mV |
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