L6572

Electrical characteristics

Doc ID 023882 Rev 1

9/22

Figure 4.

Test signal

where:

●

Test A: starting voltage Vm = ± 465 mV, half period T = 6,67

μs (f = 75 kHz; tDT = 2,5

μs)

●

Test B: starting voltage Vm = ± 340 mV, half period T = 10,0

μs (f = 50 kHz; tDT = 2,5

μs)

●

Test C: starting voltage Vm = ± 340 mV, half period T = 12,5

μs (f = 40 kHz; tDT = 2,5

μs)

●

T measured from the falling edge of HVG (LVG) to the falling edge of LVG (HVG).

TPB

Temperature threshold for

powerboost activation

(1)

64

80

106

°C

VTSD

VTSD low voltage threshold

5.5

6.2

6.9

V

VTSD-Z

Zener voltage on TSD pin

ITSD = 600 µA (2)

11.5

12.8

14.0

V

ITSD

Current consumption TSD-function

VTSD = 11 V

30

40

50

µA

1.

Guaranteed by design.

2.

For a correct operation of the TSD function, the internal clamping diode has always to be turned on with the

minimum supply voltage of the device.

Table 5.

Electrical characteristics (continued)

Symbol

Parameter

Test condition

Min.

Typ.

Max.

Unit

T

tT1/2on

tDT

Vm

Aint

HVG

LVG

SENSE

AM14884v1