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HA5025IP Datasheet(PDF) 13 Page - Renesas Technology Corp |
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HA5025IP Datasheet(HTML) 13 Page - Renesas Technology Corp |
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13 / 15 page ![]() HA5025 FN3591 Rev 6.00 Page 13 of 15 May 2003 Die Characteristics DIE DIMENSIONS: 2010 m x 3130m x 483m METALLIZATION: Type: Metal 1: AlCu (1%) Thickness: Metal 1: 8k Å 0.4kÅ Metal 2: AlCu (1%) Metal 2: 16k Å 0.8kÅ SUBSTRATE POTENTIAL (Powered Up): V- PASSIVATION: Type: Nitride Thickness: 4k Å 0.4kÅ TRANSISTOR COUNT: 248 PROCESS: High Frequency Bipolar Dielectric Isolation Metallization Mask Layout HA5025 +IN3 V- +IN4 +IN1 V+ +IN2 |
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