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BAX12 Datasheet(PDF) 6 Page - NXP Semiconductors

Part # BAX12
Description  Controlled avalanche diode
PDF  8 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BAX12 Datasheet(HTML) 6 Page - NXP Semiconductors

  BAX12 Datasheet HTML 1Page - NXP Semiconductors BAX12 Datasheet HTML 2Page - NXP Semiconductors BAX12 Datasheet HTML 3Page - NXP Semiconductors BAX12 Datasheet HTML 4Page - NXP Semiconductors BAX12 Datasheet HTML 5Page - NXP Semiconductors BAX12 Datasheet HTML 6Page - NXP Semiconductors BAX12 Datasheet HTML 7Page - NXP Semiconductors BAX12 Datasheet HTML 8Page - NXP Semiconductors  
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1996 Sep 17
6
Philips Semiconductors
Product specification
Controlled avalanche diode
BAX12
Fig.8
Reverse current as a function of continuous
reverse voltage.
handbook, halfpage
100
200
600
0
200
400
MBG698
150
(1)
(4)
IR
(mA)
VR (V)
(2)
(3)
Reverse voltages higher than the VR ratings are allowed, provided:
a. The transient energy
≤ 7.5 mJ at PRRM ≤30 W; Tj =25 °C;
the transient energy
≤ 5 mJ at PRRM = 120 W; Tj =25 °C (see Fig.7).
b. T
≥ 50 ms; δ≤0.01 (rectangular waveform) (see Fig.9).
δ≤0.02 (triangular waveform) (see Fig.9).
With increasing temperature, the maximum permissible transient
energy must be decreased by 0.03 mJ/K.
(1) Tj =25 °C; minimum values.
(2) Tj = 175 °C; minimum values.
(3) Tj =25 °C; maximum values.
(4) Tj = 175 °C; maximum values.
Fig.9
Peak reverse voltage and current test
pulses.
handbook, halfpage
MBG699
VR
IR
T
time
time
t (rectangular waveform)
t
(triangular
waveform)
δ =
t
T



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