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BAX12 Datasheet(PDF) 7 Page - NXP Semiconductors |
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BAX12 Datasheet(HTML) 7 Page - NXP Semiconductors |
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7 / 8 page ![]() 1996 Sep 17 7 Philips Semiconductors Product specification Controlled avalanche diode BAX12 Fig.10 Reverse recovery voltage test circuit and waveforms. Input signal: reverse pulse rise time tr = 0.6 ns; reverse pulse duration tp = 100 ns; duty factor δ = 0.05. Oscilloscope: rise time tr = 0.35 ns. Circuit capacitance: C ≤ 1 pF (oscilloscope input capacitance + parasitic capacitance). (1) IR = 3 mA. handbook, full pagewidth t rr (1) I F t output signal t r t t p 10% 90% VR input signal V = V I x R RF S R = 50 S Ω IF D.U.T. R = 50 i Ω SAMPLING OSCILLOSCOPE MGA881 |
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