1996 Sep 17

2

Philips Semiconductors

Product specification

Controlled avalanche diode

BAX12

FEATURES

• Hermetically sealed leaded glass

SOD27 (DO-35) package

• Switching speed: max. 50 ns

• General application

• Continuous reverse voltage:

max. 90 V

• Repetitive peak reverse voltage:

max. 90 V

• Repetitive peak forward current:

max. 800 mA

• Repetitive peak reverse current:

max. 600 mA

• Capable of absorbing transients

repetitively.

APPLICATIONS

• Switching of inductive loads in

semi-electronic telephone

exchanges.

DESCRIPTION

The BAX12 is a controlled avalanche diode fabricated in planar technology, and

encapsulated in the hermetically sealed leaded glass SOD27 (DO-35)

package.

Fig.1 Simplified outline (SOD27; DO35) and symbol.

Marking code: BAX12.

handbook, halfpage

MAM246

k

a

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Notes

2. Device mounted on an FR4 printed circuit-board; lead length 10 mm.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

repetitive peak reverse voltage

note 1

−

90

V

continuous reverse voltage

note 1

−

90

V

continuous forward current

see Fig.2; note 2

−

400

mA

repetitive peak forward current

−

800

mA

non-repetitive peak forward current

surge; see Fig.4

t=1

µs

−

55

A

t = 100

µs

−

15

A

t = 10 ms

−

9A

total power dissipation

−

450

mW

repetitive peak reverse current

−

600

mA

repetitive peak reverse energy

−

5.0

mJ

storage temperature

−65

+200

°C

junction temperature

−

200

°C