Nexperia

NHUMB10/13/9 series

80 V, 100 mA PNP/PNP resistor-equipped double transistors

8. Limiting values

Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Tamb = 25 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Max

Unit

Per transistor

VCBO

collector-base voltage

open emitter

-

-80

V

VCEO

collector-emitter voltage

open base

-

-80

V

VEBO

emitter-base voltage

open collector

-

-7

V

input voltage

NHUMB10

-20

+7

V

NHUMB13

-30

+7

V

VI

NHUMB9

-40

+7

V

IO

output current

-

-100

mA

Ptot

total power dissipation

Tamb ≤ 25 °C

[1]

-

235

mW

Per device

Ptot

total power dissipation

Tamb ≤ 25 °C

[1]

-

350

mW

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

-55

150

°C

Tstg

storage temperature

-65

150

°C

[1] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated and standard footprint.

Tamb (°C)

-75

175

125

25

75

-25

aaa-031893

200

100

300

400

Ptot

(mW)

0

FR4 PCB, single-sided copper, standard footprint

Fig. 1. Per device: Power derating curve SOT363 (SC-88)

NHUMB10_13_9_SER

All information provided in this document is subject to legal disclaimers.

©

Nexperia B.V. 2020. All rights reserved

Product data sheet

Rev. 1 — 23 July 2020

3 / 15