Nexperia

NHUMB10/13/9 series

80 V, 100 mA PNP/PNP resistor-equipped double transistors

10. Characteristics

Table 8. Characteristics

Tamb = 25 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max Unit

Per transistor

V(BR)CBO

collector-base

breakdown voltage

IC = -100 µA; IE = 0 A

-80

-

-

V

V(BR)CEO

collector-emitter

breakdown voltage

IC = -2 mA; IB = 0 A

-80

-

-

V

ICBO

collector-base cut-off

current

VCB = -80 V; IE = 0 A

-

-

-100 nA

VCE = -60 V; IB = 0 A

-

-

-100 nA

ICEO

collector-emitter cut-off

current

VCE = -60 V; IB = 0 A; Tj = 150 °C

-

-

-5

µA

emitter-base cut-off current

NHUMB10

-

-

-270 µA

NHUMB13

-

-

-260 µA

IEBO

NHUMB9

VEB = -7 V; IC = 0 A

-

-

-230 µA

hFE

DC current gain

VCE = -5 V; IC = -10 mA

100

-

-

VCEsat

collector-emitter

saturation voltage

IC = -10 mA; IB = -0.5 mA

-

-

-100 mV

off-state input voltage

NHUMB10

-

-595 -500 mV

NHUMB13

-625 -500 mV

VI(off)

NHUMB9

VCE = -5 V ; IC = -100 µA

-690 -500 mV

on-state input voltage

NHUMB10

-1.2

-0.81 -

V

NHUMB13

-1.4

-0.95 -

V

VI(on)

NHUMB9

VCE = -0.3 V ; IC = -10 mA

-1.6

-1.22 -

V

bias resistor 1 (input)

[1]

NHUMB10

1.54

2.2

2.86

kΩ

NHUMB13

3.3

4.7

6.1

kΩ

R1

NHUMB9

7

10

13

kΩ

bias resistor ratio

[1]

NHUMB10

17

21

26

NHUMB13

8

10

12

R2/R1

NHUMB9

3.7

4.7

5.7

fT

transition frequency

VCE = -5 V; IC = -10 mA; f = 100 MHz

[2] -

150

-

MHz

Cc

collector capacitance

VCB = -10 V; IE = ie = 0 A; f = 1 MHz

-

-

3

pF

[1] See section "Test information" for resistor calculation and test conditions

[2] Characteristics of built-in transistor

NHUMB10_13_9_SER

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Nexperia B.V. 2020. All rights reserved

Product data sheet

Rev. 1 — 23 July 2020

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