Nexperia

NHUMB10/13/9 series

80 V, 100 mA PNP/PNP resistor-equipped double transistors

IC (mA)

-10-1

-102

-10

-1

aaa-031752

102

10

103

hFE

1

(1)

(3)

(2)

VCE = -5 V

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = -40 °C

Fig. 15. NHUMB9: DC current gain as a function of

collector current; typical values

VCE (V)

0

-5

-4

-2

-3

-1

aaa-031753

-0.04

-0.06

-0.02

-0.08

-0.10

IC

(A)

0

-0.065 mA

-0.195 mA

-0.130 mA

-0.260 mA

-0.325 mA

-0.390 mA

-0.455 mA

-0.520 mA

IB = -0.650 mA

-0.585 mA

Tamb = 25 °C

Fig. 16. NHUMB9: Collector current as a function of

collector-emitter voltage; typical values

IC (mA)

-10-1

-102

-10

-1

aaa-031754

-10

-1

-102

VI(on)

(V)

-10-1

(1)

(3)

(2)

VCE = -0.3 V

(1) Tamb = -40 °C

(2) Tamb = 25 °C

(3) Tamb = 100 °C

Fig. 17. NHUMB9: On-state input voltage as a function

of collector current; typical values

aaa-031755

IC (mA)

-10-1

-102

-10

-1

-1

-10

VI(off)

(V)

-10-1

(1)

(3)

(2)

VCE = -5 V

(1) Tamb = -40 °C

(2) Tamb = 25 °C

(3) Tamb = 100 °C

Fig. 18. NHUMB9: Off-state input voltage as a function

of collector current; typical values

NHUMB10_13_9_SER

All information provided in this document is subject to legal disclaimers.

©

Nexperia B.V. 2020. All rights reserved

Product data sheet

Rev. 1 — 23 July 2020

9 / 15