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LT3756 Datasheet(PDF) 4 Page - Analog Devices

Part # LT3756
Description  60VIN/120VOUT Dual LED Controller with Exponential PWM and Scalable Dimming
PDF  31 Pages
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Manufacturer  AD [Analog Devices]
Direct Link  http://www.analog.com
Logo AD - Analog Devices

LT3756 Datasheet(HTML) 4 Page - Analog Devices

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LT8355-1
4
Rev. A
For more information www.analog.com
ELECTRICAL CHARACTERISTICS
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: Do not apply a positive or negative voltage to the PWMTG1,
PWMTG2, RT, VREF, VC1, VC2, GATE1 or GATE2 pin, otherwise permanent
damage may occur. Use these pins only as directed in the Pin Functions
and Applications Information sections.
Note 3: LT8355I-1 is guaranteed to meet performance specifications from
–40°C to 125°C junction temperature. Operation lifetime is derated at
junction temperatures greater than 125°C.
Note 4: This IC include overtemperature protection that is intended to
protect the device during momentary overload conditions. The maximum
rated junction temperature will be exceeded when this protection is active.
Continuous operation above the specified absolute maximum operating
junction temperature may impair device reliability or permanently damage
the device.
Note 5: LED voltage and current sense amplifier parameters are measured
in a servo loop with VC.
Note 6: Tested in a non-switching setup and correlated by design.
Note 7: Tested at RT = 51.1kΩ, guaranteed for all RT by design.
Note 8: GATE1,2 rise and fall times as well as the step size for the PWM
ADC are guaranteed by design and not tested.
Note 9: ISP1 – ISN1 and ISP2 – ISN2 may exceed 10V transiently. Do not
exceed ISP1 – ISN1 = 10V or ISP2 – ISN2 = 10V for more than 1 ms.
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
Minimum On-Time
CGATE1,2 = 3.3nF
CGATE1,2 = 10nF, RT = 51.1kΩ (Note 7)
100
180
ns
ns
Channel 1, Channel 2 External NMOS Power Switch Driver
Pull-Up Device On-Resistance
5
Ω
Pull-Down Device On-Resistance
3
Ω
GATE Rise Time (Note 8)
CGATE1,2 = 3.3nF, 10% to 90%
45
ns
GATE Fall Time (Note 8)
CGATE1,2 = 3.3nF, 90% to 10%
40
ns
Channel 1, Channel 2 External PMOS Driver
PWMTG ON Voltage (VISP – VPWMTG)
VISP1,2 = 100V
7.5
8.5
9.5
V
PWMTG OFF Voltage (VISP – VPWMTG)
VISP1,2 = 100V
0
0.3
V
PWMTG Turn-On Time
CL = 470pF, VISP1,2 = 100V
150
ns
PWMTG Turn-Off Time
CL = 470pF, VISP1,2 = 100V
180
ns
Channel 1, Channel 2 Fault Detection
FB LED Open Threshold
VISP1,2 = VISN 1,2, FB Rising
1.116
1.14
1.164
V
FB Overvoltage Threshold
FB1,2 Rising
1.235
1.26
1.285
V
FB Shorted LED Threshold
FB1,2 Falling
300
330
mV
LED Overcurrent Protection Threshold (VISP – VISN)
580
670
760
mV
FAULT Pin Pull Down Current
VFAULT1-2 = 0.3V, VFB1,2 = 1.3V
0.5
mA
FAULT Pin Leakage Current
VFAULT1-2 = 15V, VFB1,2 = 0.7V
100
nA
Channel 1, Channel 2 Internal PWM Generator
PWM Pin Voltage for Max Duty Ratio
1.5
V
PWM Pin Voltage for Min Duty Ratio
0.5
V
PWM Off Threshold (Falling)
0.4
V
PWM On Threshold (Rising)
1.6
V
Minimum Duty Ratio
VPWM1,2 = 0.5V, RT = 51.1kΩ
0.78
%
Maximum Duty Ratio
VPWM1,2 = 1.5V, RT = 51.1kΩ
100
%
PWM Voltage Step per Duty Ratio Setting
(Note 8)
7.8
mV
PWM Pin Current
VPWM1,2 = 1V
0
nA
PWM Clock Frequency
fSW/1000
Hz
Fraction of VREF for 10% Duty
RT = 51.1kΩ
0.511VREF
V
The l denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. (Note 2). Unless otherwise noted, VIN = EN/UVLO = 12V, ISP1,2 =
ISN1,2 = 60V, CTRL1,2 = IADJ2 = 2V, PWM1,2 = INTVCC, FB1,2 = 1V, SENSEN1,2 = 0V.



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