BF901 datasheet(2/7 Pages) PHILIPS

2 / 7 page

November 1992

Philips Semiconductors

Product speciﬁcation

Silicon n-channel dual gate MOS-FETs

BF901; BF901R

FEATURES

• Intended for low voltage operation

• Short channel transistor with high

ratio

 Yfs :Cis

• Low noise gain-controlled amplifier

to 1 GHz

• BF901R has reverse pinning.

DESCRIPTION

Enhancement type field-effect

transistors in plastic microminiature

SOT143 and SOT143R envelopes,

with source and substrate

interconnected. They are intended for

UHF and VHF applications, such as

television tuners and professional

communications equipment

especially suited for low voltage

operation. These MOS-FET tetrodes

are protected against excessive input

voltage surges by integrated

back-to-back diodes between gates

and source.

PINNING

DESCRIPTION

source

drain

gate 2

gate 1

QUICK REFERENCE DATA

SYMBOL

PARAMETER

TYP.

MAX.

UNIT

VDS

drain-source voltage

−

drain current

−

Ptot

total power dissipation

−

200

junction temperature

−

150

°C

 Y

fs 

transfer admittance

Cig1-s

input capacitance at gate 1

2.35

2.75

Crs

feedback capacitance

−

noise ﬁgure at 800 MHz

1.7

−

Fig.1 Simplified outline (SOT143) and symbol.

Marking code: MO1.

handbook, halfpage

s,b

Top view

MAM039

Fig.2 Simplified outline (SOT143R) and symbol.

Marking code: MO2.

handbook, halfpage

s,b

MAM040

Top view

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