BF901 datasheet(4/7 Pages) PHILIPS

4 / 7 page

November 1992

Philips Semiconductors

Product speciﬁcation

Silicon n-channel dual gate MOS-FETs

BF901; BF901R

STATIC CHARACTERISTICS

Tj = 25 °C.

DYNAMIC CHARACTERISTICS

Measuring conditions (common source): ID = 14 mA; VDS = 5 V; VG2-S = 4 V; Tamb = 25 °C.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

±IG1-SS

gate 1 cut-off current

±VG1-S = 5 V; VG2-S = VDS = 0

−

±I

G2-SS

gate 2 cut-off current

±VG2-S = 5 V; VG1-S = VDS = 0

−

±V

(BR)G1-SS

gate 1-source breakdown voltage

±IG1-SS = 10 mA; VG2-S = VDS = 0

±V(BR)G2-SS

gate 2-source breakdown voltage

±IG2-SS = 10 mA; VG1-S = VDS = 0

VG1-S(th)

gate 1-source threshold voltage

ID = 20 µA; VDS = 8 V; VG2-S = 4 V

0.7

VG2-S(th)

gate 2-source threshold voltage

ID = 20 µA; VDS = 8 V; VG1-S = 0

0.3

IDSX

drain-source current

VDS = 4 V; VG1-S = 1.1 V; VG2-S = 3.4 V 2

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

 Yfs 

transfer admittance

pulsed; Tj = 25 °C

252835mS

Cig1-s

input capacitance at gate 1

f = 1 MHz

−

2.35

2.75

Cig2-s

input capacitance at gate 2

f = 1 MHz

−

1.2

−

Cos

output capacitance

f = 1 MHz

−

1.4

−

Crs

feedback capacitance

f = 1 MHz

−

noise ﬁgure

f = 200 MHz; Gs = 2 mS; Bs = Bsopt.

−

0.7

−

f = 800 MHz; Gs = 3.3 mS; Bs = Bsopt.

−

1.7

−

BF901 Datasheet(PDF) 4 Page - NXP Semiconductors

BF901 Datasheet(HTML) 4 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7

Datasheet Download

Link URL