| Electronic Components Datasheet Search |
|
BF901 Datasheet(PDF) 3 Page - NXP Semiconductors |
|
|
|||||||||||||||||||||||||||||
BF901 Datasheet(HTML) 3 Page - NXP Semiconductors |
|
3 / 7 page ![]() November 1992 3 Philips Semiconductors Product specification Silicon n-channel dual gate MOS-FETs BF901; BF901R LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). THERMAL RESISTANCE Note 1. Device mounted on an FR4 printboard. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 12 V VD-G2 drain-gate 2 voltage − 6V ID DC drain current − 30 mA ±I G1-S gate 1-source current − 10 mA ±IG2-S gate 2-source current − 10 mA Ptot total power dissipation BF901 up to Tamb = 50 °C (note 1) − 200 mW BF901R up to Tamb = 40 °C (note 1) − 200 mW Tstg storage temperature −65 150 °C Tj junction temperature − 150 °C SYMBOL PARAMETER THERMAL RESISTANCE Rth j-a thermal resistance from junction to ambient (note 1) BF901 500 K/W BF901R 550 K/W Fig.3 Power derating curve. handbook, halfpage 0 50 100 200 240 0 120 MBB756 150 Ptot (mW) T ( °C) amb BF901R BF901 |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |