BF998WR datasheet(5/12 Pages) PHILIPS

Part #	BF998WR

Description	N-channel dual-gate MOS-FET

PDF	12 Pages

Scroll/Zoom	100%

Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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5 / 12 page

1997 Sep 05

Philips Semiconductors

Product speciﬁcation

N-channel dual-gate MOS-FET

BF998WR

Fig.3 Transfer characteristics; typical values.

VDS =8V.

Tamb =25 °C.

MGC471

I D

(mA)

(V)

G1 S

= 4 V

3 V

2 V

1 V

0 V

G2 S

Fig.4 Output characteristics; typical values.

VG2-S =4V.

Tamb =25 °C.

210

MGC470

I D

(mA)

(V)

0.4 V

0.3 V

0.2 V

0.1 V

−0.1 V

0 V

G1 S

−0.2 V

−0.3 V

−0.4 V

−0.5 V

VDS = 8 V; VG2 = 4 V; Tamb =25 °C.

Fig.5

Drain current as a function of gate 1 voltage;

typical values.

−1600

400

MGC472

−1200

−800

−400

max

typ

min

(mS)

(mV)

Fig.6

Forward transfer admittance as a function

of drain current; typical values.

VDS = 8 V; Tamb =25 °C.

020

MGC473

y fs

(mS)

(mA)

= 0 V

− S

0.5 V

4 V

3 V

2 V

1 V

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