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BF998WR Datasheet(PDF) 7 Page - NXP Semiconductors

Part # BF998WR
Description  N-channel dual-gate MOS-FET
PDF  12 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BF998WR Datasheet(HTML) 7 Page - NXP Semiconductors

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1997 Sep 05
7
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
BF998WR
Fig.11 Input admittance as a function of the
frequency; typical values.
VDS = 8 V; VG2-S =4V.
ID = 10 mA; Tamb =25 °C.
10 3
MGC466
102
10
10 2
1
10
10 1
y is
(mS)
f (MHz)
b is
g is
VDS = 8 V; VG2-S =4V.
ID = 10 mA; Tamb =25 °C.
Fig.12 Reverse transfer admittance and phase as
a function of frequency; typical values.
10 3
MGC467
102
10
10 3
10 2
10
1
y rs
10 3
10
10
1
2
(
µS)
f (MHz)
rs
yrs
(deg)
rs
ϕ
ϕ
Fig.13 Forward transfer admittance and phase as
a function of frequency; typical values.
VDS = 8 V; VG2-S =4V.
ID = 10 mA; Tamb =25 °C.
10 3
MGC468
102
10
1
10 2
10
1
10
10
2
y fs
(mS)
y fs
f (MHz)
(deg)
fs
fs
ϕ
ϕ
Fig.14 Output admittance as a function of the
frequency; typical values.
VDS = 8 V; VG2-S =4V.
ID = 10 mA; Tamb =25 °C.
10 3
MGC469
102
10
10 1
10
1
10 2
yos
(mS)
f (MHz)
bos
gos



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