BF998WR datasheet(4/12 Pages) PHILIPS

4 / 12 page

1997 Sep 05

Philips Semiconductors

Product speciﬁcation

N-channel dual-gate MOS-FET

BF998WR

THERMAL CHARACTERISTICS

Notes

1. Device mounted on a printed-circuit board.

2. Ts is the temperature at the soldering point of the source lead.

STATIC CHARACTERISTICS

Tj =25 °C; unless otherwise speciﬁed.

DYNAMIC CHARACTERISTICS

Common source; Tamb =25 °C; VG2-S = 4 V; ID = 10 mA; VDS = 8 V; unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

350

K/W

Rth j-s

thermal resistance from junction to soldering point

note 2; Ts =90 °C

200

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V(BR)G1-SS

gate 1-source breakdown voltage

VG2-S =VDS = 0; IG1-S = 10 mA

V(BR)G2-SS

gate 2-source breakdown voltage

VG1-S =VDS = 0; IG2-S = 10 mA

V(P)G1-S

gate 1-source cut-off voltage

VG2-S =4V; VDS =8V; ID =20 µA

−−2.5

V(P)G2-S

gate 2-source cut-off voltage

VG1-S = 0; VDS =8V; ID =20 µA

−−2V

IDSS

drain-source current

VG2-S =4V; VDS =8V; VG1-S =0

IG1-SS

gate 1 cut-off current

VG2-S =VDS = 0; VG1-S =5V

−

IG2-SS

gate 2 cut-off current

VG1-S =VDS = 0; VG2-S =5V

−

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

y

fs

forward transfer admittance

pulsed; Tj =25 °C22

−

Cig1-s

input capacitance at gate 1

f = 1 MHz

−

2.1

2.5

Cig2-s

input capacitance at gate 2

f = 1 MHz

−

1.2

−

Cos

drain-source capacitance

f = 1 MHz

−

1.05

−

Crs

reverse transfer capacitance f = 1 MHz

−

noise ﬁgure

f = 200 MHz; GS = 2 mS; BS =BSopt

−

0.6

−

f = 800 MHz; GS = 3.3 mS; BS =BSopt −

−

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