BFQ136 datasheet(2/9 Pages) PHILIPS

2 / 9 page

September 1995

Philips Semiconductors

Product speciﬁcation

NPN 4 GHz wideband transistor

BFQ136

DESCRIPTION

NPN transistor in a four-lead

dual-emitter SOT122A envelope with

a ceramic cap. All leads are isolated

from the stud. Diffused

emitter-ballasting resistors and the

application of gold sandwich

metallization ensure an optimum

temperature profile and excellent

reliability properties. It features

extremely high output voltage

capabilities.

It is primarily intended for final stages

in UHF amplifiers.

PINNING

DESCRIPTION

collector

emitter

base

emitter

Fig.1 SOT122A.

page

Top view

MBK187

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

VCEO

collector-emitter voltage

open base

−

DC collector current

−

600

Ptot

total power dissipation

up to Tc = 100 °C

−

transition frequency

IC = 500 mA; VCE = 15 V; f = 500 MHz;

Tj =25 °C

4.0

−

GHz

GUM

maximum unilateral power gain

IC = 500 mA; VCE = 15 V; f = 800 MHz;

Tamb =25 °C

12.5

−

output voltage

Ic = 500 mA; VCE = 15 V;

dim = −60 dB; RL =75 Ω;

f(p+q−r) = 793.25 MHz; Tamb =25 °C

2.5

−

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All

persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of

the user. It must never be thrown out with the general or domestic waste.

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