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NVT2002TL Datasheet(PDF) 1 Page - NXP Semiconductors

Part # NVT2002TL
Description  Bidirectional voltage level translator for open-drain and push-pull applications
PDF  32 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

NVT2002TL Datasheet(HTML) 1 Page - NXP Semiconductors

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NVT2001; NVT2002
Bidirectional voltage level translator for open-drain and push-pull
applications
Rev. 4.4 — 22 May 2023
Product data sheet
1 General description
The NVT2001/02 are bidirectional voltage level translators operational from 1.0 V to 3.6 V (Vref(A)) and 1.8 V
to 5.5 V (Vref(B)), which allow bidirectional voltage translations between 1.0 V and 5 V without the need for a
direction pin in open-drain or push-pull applications. Bit widths ranging from 1-bit or 2-bit are offered for level
translation application with transmission speeds < 33 MHz for an open-drain system with a 50 pF capacitance
and a pull-up of 197 Ω.
When the An or Bn port is LOW, the clamp is in the ON-state and a low resistance connection exists between
the An and Bn ports. The low ON-state resistance (Ron) of the switch allows connections to be made with
minimal propagation delay. Assuming the higher voltage is on the Bn port when the Bn port is HIGH, the voltage
on the An port is limited to the voltage set by VREFA. When the An port is HIGH, the Bn port is pulled to the
drain pull-up supply voltage (Vpu(D)) by the pull-up resistors. This functionality allows a seamless translation
between higher and lower voltages selected by the user without the need for directional control.
When EN is HIGH, the translator switch is on, and the An I/O are connected to the Bn I/O, respectively, allowing
bidirectional data flow between ports. When EN is LOW, the translator switch is off, and a high-impedance state
exists between ports. The EN input circuit is designed to be supplied by Vref(B). To ensure the high-impedance
state during power-up or power-down, EN must be LOW.
All channels have the same electrical characteristics and there is minimal deviation from one output to another
in voltage or propagation delay. This is a benefit over discrete transistor voltage translation solutions, since
the fabrication of the switch is symmetrical. The translator provides excellent ESD protection to lower voltage
devices, and at the same time protects less ESD-resistant devices.
2 Features and benefits
• Provides bidirectional voltage translation with no direction pin
• Less than 1.5 ns maximum propagation delay
• Allows voltage level translation between:
– 1.0 V Vref(A) and 1.8 V, 2.5 V, 3.3 V or 5 V Vref(B)
– 1.2 V Vref(A) and 1.8 V, 2.5 V, 3.3 V or 5 V Vref(B)
– 1.8 V Vref(A) and 3.3 V or 5 V Vref(B)
– 2.5 V Vref(A) and 5 V Vref(B)
– 3.3 V Vref(A) and 5 V Vref(B)
• Low 3.5 Ω ON-state connection between input and output ports provides less signal distortion
• 5 V tolerant I/O ports to support mixed-mode signal operation
• High-impedance An and Bn pins for EN = LOW
• Lock-up free operation
• Flow through pinout for ease of printed-circuit board trace routing
• ESD protection exceeds 4 kV HBM per JESD22-A114 and 1000 V CDM per JESD22-C101


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