NXP Semiconductors

NVT2001; NVT2002

Bidirectional voltage level translator for open-drain and push-pull applications

[1]

Vref(A) ≤ Vref(B) - 1 V for best results in level shifting applications.

10 Static characteristics

Tamb = -40 °C to +105 °C, unless otherwise specified.

Symbol Parameter

Conditions

Min

Typ[1]

Max

Unit

VIK

input clamping voltage

II = -18 mA; VI(EN) = 0 V

-

-

-1.2

V

IIH

HIGH-level input current

VI = 5 V; VI(EN) = 0 V

-

-

5

μA

Ci(EN)

input capacitance on pin EN

VI = 3 V or 0 V

-

7.1

-

pF

Cio(off)

off-state input/output capacitance

An, Bn; VO = 3 V or 0 V;

VI(EN) = 0 V

-

4

6

pF

Cio(on)

on-state input/output capacitance

An, Bn; VO = 3 V or 0 V;

VI(EN) = 3 V

-

9.3

12.5[2]

pF

An, Bn; VI = 0 V; IO = 64 mA;

VI(EN) = 4.5 V

[3][4][5] 1

2.4

5.0

Ω

Ron

ON-state resistance

VI = 2.4 V; IO = 15 mA; VI(EN)

= 4.5 V

[3][4] -

4.8

7.5

Ω

Table 11. Static characteristics

[1]

All typical values are at Tamb = 25 °C.

[2]

Not production tested, maximum value based on characterization data of typical parts.

[3]

Measured by the voltage drop between the An and Bn terminals at the indicated current through the switch. ON-state resistance is determined by the

lowest voltage of the two terminals.

[4]

See curves in Figure 10 for typical temperature and VI(EN) behavior.

[5]

Guaranteed by design.

NVT2001_NVT2002

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Product data sheet

Rev. 4.4 — 22 May 2023

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