BFR31 datasheet(6/12 Pages) PHILIPS

6 / 12 page

1997 Dec 05

Philips Semiconductors

Product speciﬁcation

N-channel ﬁeld-effect transistors

BFR30; BFR31

Fig.7

Drain current as a function of junction

temperature; typical values.

BFR30.

VDS =10V.

handbook, halfpage

125

(mA)

100

MDA661

Tj (°C)

VGS = 0 V

−0.5

−1.0

−1.5

−2.0

Fig.8 Drain current as a function of junction

temperature; typical values.

BFR31.

VDS =10V.

handbook, halfpage

−1

−1.2

125

(mA)

100

MDA662

Tj (°C)

−0.2

−0.4

−0.6

−0.8

VGS =

0 V

Fig.9

Gate cut-off current as a function of junction

temperature; typical values.

VGS = −10 V; VDS =0.

handbook, halfpage

200

100

IGSS

(nA)

150

Tj (°C)

10−1

10−2

10−3

MDA656

Fig.10 Gate-source cut-off voltage as a function of

drain current; typical values.

ID = 0.5 nA; VDS = 10 V; VGS = 0; Tj =25 °C.

handbook, halfpage

010

−6

−2

−4

IDSS (mA)

VGS(off)

(V)

468

MDA663

BFR31

BFR30

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