1997 Dec 05

2

Philips Semiconductors

Product specification

N-channel field-effect transistors

BFR30; BFR31

DESCRIPTION

Planar epitaxial symmetrical junction N-channel

field-effect transistor in a plastic SOT23 package.

APPLICATIONS

• Low level general purpose amplifiers in thick and

thin-film circuits.

PINNING - SOT23

Note

1. Drain and source are interchangeable.

PIN

SYMBOL

DESCRIPTION

1

d

2

s

3

g

gate

CAUTION

This product is supplied in anti-static packing to prevent

damage caused by electrostatic discharge during

transport and handling. For further information, refer to

Philips specs.: SNW-EQ-608, SNW-FQ-302A and

SNW-FQ-302B.

Fig.1 Simplified outline and symbol.

Marking codes:

BFR30: M1p.

BFR31: M2p.

handbook, halfpage

12

g

d

s

3

Top view

MAM385

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

drain-source voltage

−±25

V

gate-source voltage

open drain

−−25

V

total power dissipation

−

250

mW

drain current

BFR30

4

10

mA

BFR31

1

5

mA

y

common-source transfer admittance

BFR30

1

4

mS

BFR31

1.5

4.5

mS