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BFT46 Datasheet(PDF) 6 Page - NXP Semiconductors |
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BFT46 Datasheet(HTML) 6 Page - NXP Semiconductors |
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6 / 9 page ![]() December 1997 6 Philips Semiconductors Product specification N-channel silicon FET BFT46 Fig.8 yos versus VDS. ID = 0,4 mA; f = 1 kHz; Tamb =25 °C. handbook, halfpage 30 010 20 VDS (V) 103 102 10 1 MDA271 |yos| ( µA/V) typ Fig.9 Typical values. VDS = 10 V; Tamb =25 °C. handbook, halfpage 0 VGS (V) Cis (pF) 6 4 2 0 −1 −2 −4 −3 MDA266 Fig.10 Typical values. VDS = 10 V, Tamb =25 °C. handbook, halfpage 0 VGS (V) Crs (pF) 1.5 1 0.5 0 −1 −2 −4 −3 MDA267 Fig.11 IGSS versus Tj. −VGSS = 10V; VDS =0. handbook, halfpage 150 100 50 IGSS (nA) 0 typ 10 1 10−1 10−2 10−3 MDA268 Tj (°C) |
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